PART |
Description |
Maker |
MRF160 |
POWE FIELD EFFECT TRANSISTOR
|
Advanced Semiconductor
|
QM15TB-2H |
TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
QM30TB-2H |
TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
QM15TD-HB |
TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
QM20KD-HB |
TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
QM50TB-24B |
TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
QM20TG-9B |
TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
QM50DY-24B |
MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
QM30HA-H |
MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
QM15HA-H |
MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
QM50DY-2H |
MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
RM30TPM-H02 RM30TB-M RM30TPM-H |
Rectifier Diodes, 800V Integrated Gate Bipolar Transistor (IGBT) Modules: 250V MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|